Optimization of protocrystalline silicon p-type layers for amorphous silicon n–i–p solar cells
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Real time spectroscopic ellipsometry has been applied to develop deposition phase diagrams for p-type hydrogenated silicon (Si: H) films prepared at low temperature (200° C) by rf plasma-enhanced chemical vapor deposition using gas mixtures of SiH4, H2, and BF3.
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APA
Pearce, J. (2026). Optimization of protocrystalline silicon p-type layers for amorphous silicon n–i–p solar cells. Afribary. Retrieved June 14, 2026, from http://library.afribary.com/works/optimization-of-protocrystalline-silicon-p-type-layers-for-amorphous-silicon-nip-solar-cells
MLA
Pearce, Joshua. "Optimization of protocrystalline silicon p-type layers for amorphous silicon n–i–p solar cells." Afribary, 6 Jun. 2026, http://library.afribary.com/works/optimization-of-protocrystalline-silicon-p-type-layers-for-amorphous-silicon-nip-solar-cells. Accessed June 14, 2026.
Chicago
Pearce, Joshua. "Optimization of protocrystalline silicon p-type layers for amorphous silicon n–i–p solar cells." Afribary (2026). Accessed June 14, 2026. http://library.afribary.com/works/optimization-of-protocrystalline-silicon-p-type-layers-for-amorphous-silicon-nip-solar-cells