Intrinsic and light induced gap states in aSi:H materials and solar cells—effects of microstructure

Thin Solid Films, Jan 1, 2004 The effects of microstructure on the gap states of hydrogen diluted and undiluted hydrogenated amorphous silicon (a-Si:H) thin film materials and their solar cells have been investigated. In characterizing the films the commonly used methodology of relating just the magnitudes of photocurrents and subgap absorption, α(E), was expanded to take into account states other than those due to dangling bond defects. The electron mobility-lifetime products were characterized as a function of carrier generation rates and analysis was carried out of the entire α(E) spectra and their evolution with light induced degradation. Two distinctly different defect states at 1.0 and 1.2 eV from the conduction band and their contributions to carrier recombination were identified and their respective evolution under 1 sun illumination characterized. Direct correlations were obtained between the recombination in thin films with that of corresponding solar cells. The effects of the difference in microstructure on the changes in these two gap states in films and solar cells were also identified. It is found that improved stability of protocrystalline Si:H can in part be attributed to the reduction of the 1.2 eV defects. It is also shown that ignoring the presence of multiple defects leads to erroneous conclusions being drawn about the stability of a-Si:H and SWE.