Evolution of microstructure and phase in amorphous, protocrystalline, and microcrystalline silicon studied by real time spectroscopic ellipsometry

Real time spectroscopic ellipsometry has been applied to develop deposition phase diagrams that can guide the fabrication of hydrogenated silicon (Si: H) thin films at low temperatures (< 300° C) for highest performance electronic devices such as solar cells. The simplest phase diagrams incorporate a single transition from the amorphous growth regime to the mixed-phase (amorphous+ microcrystalline) growth regime versus accumulated film thickness [the a→(a+ μc) transition].