Double amorphous silicon-carbide p-layer structures producing highly stabilized pin-type protocrystalline silicon multilayer solar cells

We have applied double p-type amorphous silicon-carbide p-a-SiC:H layer structures to pin-type protocrystalline silicon pc-Si:H multilayer solar cells. The less-pronounced initial
short-wavelength quantum efficiency variation against the biased voltage and the wide overlap of dark current—voltage JD-V and short-circuit current—open-circuit voltage  Jsc-Voc characteristics prove that the double p-a-SiC:H layer structure successfully reduces recombination at the p/ i interface. Therefore, we achieved highly stabilized efficiency of 9.0% without any backreflector.